Thin Film Chip Inductor
高頻薄膜(mo)精密芯片電(dian)感AL |
感值范圍:0.1nH~33nH 精度:±0.1,0.2,0.3nH
±1%,2%,3%,5% 內阻(Ω):0.05~4.5 電流(mA):75~850 封裝:0201
0402 |
Multilayer Chip Inductor
高(gao)頻(pin)陶瓷積(ji)層(ceng)電感CL |
感值范圍:0.3nH~470nH 精度:±0.3nH
±5%,10% 內阻(Ω):0.05~4.8 電流(mA):50~1000 封裝:0201
0402
0603 |
Wire Wound Chip Inductor
(Low Profile, High Q, Current, High SRF)
高頻陶瓷繞(rao)線電感WL |
感值范圍:1nH~15000nH 精度:±2%,3%,5%,10%
±2nH, ±5nH 內阻(Ω):0.02~11.5 電流(mA):30~2400 封裝:0402
0603
0805
1008
1206 |
Miniature Wire Wound Power Inductor
小型繞(rao)線功率電感SDIA |
感值范圍:0.9u~470uH 精度:±20%,±30% 內阻(Ω):0.013~7.8 電流(mA):0.24~8.5 封裝:0310/0312/0315
0410/0418/0520
0528/0610/0612
0620/0628/0645
0840 |
Shielded, Non-shielded, Miniature Wire Wound Power Inductor
小型(xing)繞線(xian)功率電感VLH |
感值范圍:0.12u~10000uH 精度:±5%,10%
±20%,30% 內阻(Ω):0.0098~140 電流(mA):0.03~6.0 封裝:252010E/252012E
252510
322515(C)
322520(C)
453226(C)
575047C |
Non-shielded, High Power, Wire Wound Power Inductor
開磁路繞線(xian)功(gong)率(lv)電感(gan)PDH |
感值范圍:0.18u~470uH 精度:±20%, ±30%
+40%-20% 內阻(Ω):0.002~2.3 電流(mA):0.7~30 封裝:1608/1813/3316
4920/5022 |
Non-shielded, Wire Wound Power Inductor
開磁(ci)路(lu)繞(rao)線功率電感PD |
感值范圍:0.47u~1000uH 精度:±20% 內阻(Ω):0.008~13.8 電流(mA):0.1~40 封裝:1608/3308/3316
3340/5022 |
Non-shielded, Low Profile Wire Wound Power Inductor
開磁路繞線(xian)功率電感PCD |
感值范圍:1.0u~1000uH 精度:±10%,20% 內阻(Ω):0.01~26 電流(mA):0.09~9.5 封裝:0301/0302
0403/0502/0503
0504/0703/0705
1004/1005/1006 |
Shielded, Wire Wound Power Inductor
閉磁路繞線功(gong)率(lv)電感PS |
感值范圍:1u-10000uH 精度:±20% 內阻(Ω):0.021~32.8 電流(mA):0.02~20 封裝:1608/3316/5022 |
Shielded, Wire Wound Power Inductor
閉磁(ci)路繞(rao)線功率電感PCS |
感值范圍:1.0u-1000uH 精度:±20%
+40%-20% 內阻(Ω):0.007~9.44 電流(mA):0.14~15.9 封裝:62B/64B/73/74
124/125/127 |
Shielded, Wire Wound Power Inductor
閉磁路繞線功率電感PCDR |
感值范圍:1.2u~1500uH 精度:±20%,30% 內阻(Ω):0.0069~4.78 電流(mA):0.13~13 封裝:0628/0728/0730
0732/0745/1045
1255/1265/1275 |
Shielded, Low Cost, Wire Wound Power Inductor
閉磁路繞線功率電感PCDS |
感值范圍:4.7u~820uH 精度:±20%,30% 內阻(Ω):0.013~3 電流(mA):0.16~3.15 封裝:63B/74B/105B
125B |
Shielded, Low Profile Wire Wound Power Inductor
閉磁路繞線功率電感(gan)PSDB |
感值范圍:0.56u~1000uH 精度:±30% 內阻(Ω):0.006~3.25 電流(mA):0.32~10 封裝:5D28
1003/1004/1005 |
Shielded, Low Profile Wire Wound Power Inductor
閉磁(ci)路繞線功(gong)率電(dian)感SCDB |
感值范圍:1.2u~47uH 精度:±20%,30% 內阻(Ω):0.117~2.2 電流(mA):0.22~1.1 封裝:2D12/2D15
2D18 |
Shielded, Low Profile Wire Wound Power Inductor
閉磁路(lu)繞(rao)線(xian)功率電感(gan)SCDA |
感值范圍:0.47u~100uH 精度:±20%,30% 內阻(Ω):0.035~3.84 電流(mA):0.18~3.9 封裝:2D10/2D15/2D18
3D12/3D15/3D18 |
Shielded, Low Profile Wire Wound Power Inductor
閉磁路繞線功率(lv)電感SCDS |
感值范圍:1u~680uH 精度:±20%,±30% 內阻(Ω):0.012~6.56 電流(mA):0.13~6.15 封裝:3D18/4D18
4D22/4D28
5D18/5D28
6D28/6D38 |
Shielded Wire Wound Power Inductor
閉磁路繞線功率電感PCF |
感值范圍:0.36u~2500uH 精度:±20%,30% 內阻(Ω):0.005~57.62 電流(mA):0.036~12.6 封裝:4010/4020/4030
5010/ 5020/5030
6915/6919/7040
1015/1040/1062 |
Shielded, Low Profile Wire Wound Power Inductor
閉磁路繞(rao)線功率(lv)電感PDRH |
感值范圍:0.47u~3300uH 精度:±20%,30% 內阻(Ω):0.009~57.62 電流(mA):0.026~4.82 封裝:0302/0303/0415
0502/0503/0603 |
Shielded, Wire Wound Power Inductor
閉磁路繞線功率(lv)電感SDRH |
感值范圍:1.0u~100uH 精度:±30% 內阻(Ω):0.0095~0.43 電流(mA):0.75~9 封裝:0830/0840/0845 |
Shielded, Wire Wound Power Inductor
閉磁路繞線功率電(dian)感SDB |
感值范圍:0.10u~47uH 精度:±20% 內阻(Ω):0.0005~0.210 電流(mA):3~120 封裝:0420/0520/0530
0620/0625/0630
0650/1040/1340
1350/1365 |